smd type ic www.kexin.com.cn 1 smd type transistors so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 dual n-channel 20-v (d-s) mosfet KI1902DL features absolute maximum ratings ta = 25 parameter symbol 5 secs steady state unit drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 -- t a =85 i d 0.70 0.50 0.66 0.48 a pulsed drain current i dm a continuous source current (diode conduction) * i s 0.25 0.23 a power dissipation * t a =25 -- t a =85 p d 0.30 0.16 0.27 0.14 w operating junction and storage temperature range t j ,t stg * surface mounted on 1" x 1" fr4 board. 20 12 1.0 -55 to +150 thermal resistance ratings ta = 25 parameter symbol typical maximum unit t 5sec 360 415 steady state 400 460 maximum junction-to-foot (drain) steady state r thjf 300 350 * surface mounted on 1" x 1" fr4 board. maximum junction-to-ambient* r thja /w
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.6 15 v gate-body leakage i gss v ds =0v,v gs = 12 v 100 na v ds =16v,v gs =0v 1 v ds =16 v, v gs =0v,t j =85 5 on-state drain current i d(on) v ds = 5v,v gs =4.5v 1.0 a v gs =4.5v,i d = 0.66 a 0.320 0.385 v gs =2.5v,i d =0.40a 0.560 0.630 forward transconductance g fs v ds =10v,i d =0.66a 1.5 s diode forward voltage v sd i s =0.23a,v gs =0v 0.8 1.2 v total gate charge * q g 0.8 1.2 gate-source charge * q gs 0.06 gate-drain charge * q gd 0.30 t d(on) 10 20 t r 16 30 t d(off) 10 20 t f 10 20 source-drain reverse recovery time trr i f =0.23a,d i /d t =100a/ s 20 40 * pulse test: pw 300 s duty cycle 2%. turn-off time turn-on time ns v ds =10v ,v gs =4.5v,i d =0.66a v dd =10v,r l =20 , i d =0.5a , v gen =4.5v , r g =6 nc zero gate voltage drain current i dss a drain-source on-state resistance r ds(on) KI1902DL marking marking pa
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